Investigation of 3D patterns on EUV masks by means of scatterometry and comparison to numerical simulations Conference Paper uri icon

Overview

MeSH Major

  • Cell Transformation, Viral
  • Oncogenes
  • Receptors, Cell Surface

abstract

  • EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations. © 2011 SPIE.

publication date

  • November 23, 2011

Research

keywords

  • Conference Paper

Identity

Digital Object Identifier (DOI)

  • 10.1117/12.896839

Additional Document Info

volume

  • 8166