Rigorous simulations of 3D patterns on extreme ultraviolet lithography masks Conference Paper uri icon

Overview

MeSH Major

  • Cell Transformation, Viral
  • Oncogenes
  • Receptors, Cell Surface

abstract

  • Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D computational domains and in the presence of sidewall-angles and corner-roundings. © 2011 SPIE.

publication date

  • June 10, 2011

Research

keywords

  • Conference Paper

Identity

Digital Object Identifier (DOI)

  • 10.1117/12.889831

Additional Document Info

volume

  • 8083