An efficient and robust mask model for lithography simulation Conference Paper uri icon


MeSH Major

  • Cell Transformation, Viral
  • Oncogenes
  • Receptors, Cell Surface


  • We formulate the mask modeling as a parametric model order reduction problem. We then apply a robust reduction technique to generate the compact mask model. Since this model is based on first principle, it naturally includes diffraction, polarization and couplings, important effects that are poorly handled by the modified thin-mask model (MTMM). The model generation involves only a few sampling solves of the governing equation, much fewer than that needed to generate MTMM. Though the model evaluation takes marginally more CPU time than MTMM, the accuracy and the robustness of the new model are based on much more rigorous theoretical foundation.

publication date

  • June 25, 2008



  • Conference Paper


Digital Object Identifier (DOI)

  • 10.1117/12.772987

Additional Document Info


  • 6924