Rigorous FEM-simulation of EUV-masks: Influence of shape and material parameters Conference Paper uri icon


MeSH Major

  • Cell Transformation, Viral
  • Oncogenes
  • Receptors, Cell Surface


  • We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes.1 This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations.2 Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements. This work results from a collaboration between AMTC (mask fabrication), Physikalisch-Technische Bundesanstalt (scatterometry) and ZIB/JCMwave (numerical simulation).

publication date

  • December 2006



  • Conference Paper


Digital Object Identifier (DOI)

  • 10.1117/12.686828

Additional Document Info


  • 6349 I